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017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1897067
|2 DOI
024 7 _ |a WOS:000230168100169
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024 7 _ |a 2128/1094
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037 _ _ |a PreJuSER-45608
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a He, J. Q.
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245 _ _ |a Microstructure of epitaxial BST/SRO bilayer films on SrTiO3 substrates
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 104907
336 7 _ |a Journal Article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
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|v 97
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The thickness evolution of the microstructure of epitaxial Ba0.7Sr0.3TiO3 thin films grown on SrRuO3/SrTiO3 was investigated by means of transmission electron microscopy. Within the Ba0.7Sr0.3TiO3 layer, a layered structure (three sublayers) is distinguished as for the configuration of lattice strain and defects. The first sublayer extends for 3 nm from the lattice-coherent Ba0.7Sr0.3TiO3/SrRUO3 interface. The second 13-nm-thick sublayer forms a semicoherent interface with the first sublayer due to the creation of a misfit dislocation network. The third sublayer extends beyond the second sublayer exhibiting a structure characterized by compact columnar features. Planar defects are formed at the boundaries between such features. The formation of a layered structure within the Ba0.7Sr0.3TiO3 films is discussed in the light of the growth modes of films on lattice-mismatched substrates. (c) 2005 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Vasco, E.
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700 1 _ |a Jia, C. L.
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700 1 _ |a Dittmann, R.
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773 _ _ |a 10.1063/1.1897067
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856 7 _ |u http://dx.doi.org/10.1063/1.1897067
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