000045609 001__ 45609
000045609 005__ 20200423204121.0
000045609 017__ $$aThis version is available at the following Publisher URL: http://apl.aip.org
000045609 0247_ $$2DOI$$a10.1063/1.1874313
000045609 0247_ $$2WOS$$aWOS:000228050700074
000045609 0247_ $$2Handle$$a2128/1001
000045609 037__ $$aPreJuSER-45609
000045609 041__ $$aeng
000045609 082__ $$a530
000045609 084__ $$2WoS$$aPhysics, Applied
000045609 1001_ $$0P:(DE-Juel1)VDB5958$$aMeyer, R.$$b0$$uFZJ
000045609 245__ $$aOxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films
000045609 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
000045609 300__ $$a112904
000045609 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000045609 3367_ $$2DataCite$$aOutput Types/Journal article
000045609 3367_ $$00$$2EndNote$$aJournal Article
000045609 3367_ $$2BibTeX$$aARTICLE
000045609 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000045609 3367_ $$2DRIVER$$aarticle
000045609 440_0 $$0562$$aApplied Physics Letters$$v86$$x0003-6951
000045609 500__ $$aRecord converted from VDB: 12.11.2012
000045609 520__ $$aThe leakage current response of high-permittivity columnar-grown (Ba,Sr)TiO3 thin films has been studied at elevated temperatures under dc load. We observe a thermally activated current prior to the onset of the resistance degradation with an activation energy of E-A=1.1 eV. A point defect model is applied to calculate the migration of electronic and ionic defects under the dc field as well as the current response of the system. We find that the peak in current is not caused by a space-charge-limited transient of oxygen vacancies, but related to a modulation of the electronic conductivity upon oxygen vacancy redistribution. Furthermore, we show that after the redistribution of electronic and ionic defects, no further increase in conductivity takes place in the simulation. (C) 2005 American Institute of Physics.
000045609 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000045609 588__ $$aDataset connected to Web of Science
000045609 650_7 $$2WoSType$$aJ
000045609 7001_ $$0P:(DE-Juel1)VDB6943$$aLiedtke, R.$$b1$$uFZJ
000045609 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000045609 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.1874313$$gVol. 86, p. 112904$$p112904$$q86<112904$$tApplied physics letters$$v86$$x0003-6951$$y2005
000045609 8567_ $$uhttp://hdl.handle.net/2128/1001$$uhttp://dx.doi.org/10.1063/1.1874313
000045609 8564_ $$uhttps://juser.fz-juelich.de/record/45609/files/69987.pdf$$yOpenAccess
000045609 8564_ $$uhttps://juser.fz-juelich.de/record/45609/files/69987.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000045609 8564_ $$uhttps://juser.fz-juelich.de/record/45609/files/69987.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000045609 8564_ $$uhttps://juser.fz-juelich.de/record/45609/files/69987.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000045609 909CO $$ooai:juser.fz-juelich.de:45609$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000045609 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000045609 9141_ $$y2005
000045609 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000045609 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000045609 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000045609 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000045609 970__ $$aVDB:(DE-Juel1)69987
000045609 980__ $$aVDB
000045609 980__ $$aJUWEL
000045609 980__ $$aConvertedRecord
000045609 980__ $$ajournal
000045609 980__ $$aI:(DE-Juel1)PGI-7-20110106
000045609 980__ $$aI:(DE-Juel1)VDB381
000045609 980__ $$aUNRESTRICTED
000045609 980__ $$aFullTexts
000045609 9801_ $$aFullTexts
000045609 981__ $$aI:(DE-Juel1)PGI-7-20110106
000045609 981__ $$aI:(DE-Juel1)VDB381