Journal Article

PreJuSER-45609

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Oxygen vacancy migration and time-dependent leakage current behavior of Ba0.3Sr0.7TiO3 thin films

Meyer, R.FZJ* ; Liedtke, R.FZJ* ; Waser, R.FZJ*

2005
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1001  doi:10.1063/1.1874313

Abstract: The leakage current response of high-permittivity columnar-grown (Ba,Sr)TiO3 thin films has been studied at elevated temperatures under dc load. We observe a thermally activated current prior to the onset of the resistance degradation with an activation energy of E-A=1.1 eV. A point defect model is applied to calculate the migration of electronic and ionic defects under the dc field as well as the current response of the system. We find that the peak in current is not caused by a space-charge-limited transient of oxygen vacancies, but related to a modulation of the electronic conductivity upon oxygen vacancy redistribution. Furthermore, we show that after the redistribution of electronic and ionic defects, no further increase in conductivity takes place in the simulation. (C) 2005 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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