%0 Journal Article
%A Galanakis, I.
%A Lezaic, M.
%A Bihlmayer, G.
%A Blügel, S.
%T Interface properties of NiMnSb/InP and NiMnSb/GaAs contacts
%J Physical review / B
%V 71
%N 21
%@ 1098-0121
%C College Park, Md.
%I APS
%M PreJuSER-46233
%P 214431
%D 2005
%Z Record converted from VDB: 12.11.2012
%X We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential ab initio electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor, the larger hybridization between the Ni-d and As-p orbitals with respect to the hybridization between the Ni-d and P-p orbitals destroys this polarization. The (111) interfaces present strong interface states, but also in this case there are few interfaces presenting a high spin polarization at the Fermi level which can reach values up to 74%.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000230276600068
%R 10.1103/PhysRevB.71.214431
%U https://juser.fz-juelich.de/record/46233