Journal Article

PreJuSER-46233

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Interface properties of NiMnSb/InP and NiMnSb/GaAs contacts

Galanakis, I. ; Lezaic, M.FZJ* ; Bihlmayer, G.FZJ* ; Blügel, S.FZJ*

2005
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/1413  doi:10.1103/PhysRevB.71.214431

Abstract: We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential ab initio electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor, the larger hybridization between the Ni-d and As-p orbitals with respect to the hybridization between the Ni-d and P-p orbitals destroys this polarization. The (111) interfaces present strong interface states, but also in this case there are few interfaces presenting a high spin polarization at the Fermi level which can reach values up to 74%.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Theorie I (IFF-TH-I)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Kondensierte Materie (M02)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://prb.aps.org

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