TY  - JOUR
AU  - Galanakis, I.
AU  - Lezaic, M.
AU  - Bihlmayer, G.
AU  - Blügel, S.
TI  - Interface properties of NiMnSb/InP and NiMnSb/GaAs contacts
JO  - Physical review / B
VL  - 71
IS  - 21
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-46233
SP  - 214431
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential ab initio electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor, the larger hybridization between the Ni-d and As-p orbitals with respect to the hybridization between the Ni-d and P-p orbitals destroys this polarization. The (111) interfaces present strong interface states, but also in this case there are few interfaces presenting a high spin polarization at the Fermi level which can reach values up to 74%.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000230276600068
DO  - DOI:10.1103/PhysRevB.71.214431
UR  - https://juser.fz-juelich.de/record/46233
ER  -