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017 _ _ |a This version is available at the following Publisher URL: http://prb.aps.org
024 7 _ |a 10.1103/PhysRevB.71.214431
|2 DOI
024 7 _ |a WOS:000230276600068
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024 7 _ |a 2128/1413
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037 _ _ |a PreJuSER-46233
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Galanakis, I.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Interface properties of NiMnSb/InP and NiMnSb/GaAs contacts
260 _ _ |a College Park, Md.
|b APS
|c 2005
300 _ _ |a 214431
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|v 71
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential ab initio electronic structure methods. Although in the case of most NiMnSb/InP(001) contacts the half-metallicity is lost, it is possible to keep a high degree of spin polarization when the interface is made up by Ni and P layers. In the case of the GaAs semiconductor, the larger hybridization between the Ni-d and As-p orbitals with respect to the hybridization between the Ni-d and P-p orbitals destroys this polarization. The (111) interfaces present strong interface states, but also in this case there are few interfaces presenting a high spin polarization at the Fermi level which can reach values up to 74%.
536 _ _ |a Kondensierte Materie
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542 _ _ |i 2005-06-30
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Lezaic, M.
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700 1 _ |a Bihlmayer, G.
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700 1 _ |a Blügel, S.
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773 1 8 |a 10.1103/physrevb.71.214431
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|t Physical Review B
|v 71
|y 2005
|x 1098-0121
773 _ _ |a 10.1103/PhysRevB.71.214431
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856 7 _ |u http://dx.doi.org/10.1103/PhysRevB.71.214431
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856 4 _ |u https://juser.fz-juelich.de/record/46233/files/72669.pdf
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