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000004668 084__ $$2WoS$$aEngineering, Electrical & Electronic
000004668 084__ $$2WoS$$aNanoscience & Nanotechnology
000004668 084__ $$2WoS$$aOptics
000004668 084__ $$2WoS$$aPhysics, Applied
000004668 1001_ $$0P:(DE-Juel1)VDB75717$$aSoni, R.$$b0$$uFZJ
000004668 245__ $$aIntegration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications
000004668 260__ $$a[S.l.] @$$bElsevier$$c2009
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000004668 440_0 $$04347$$aMicroelectronic Engineering$$v86$$x0167-9317
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000004668 520__ $$aThis work presents the characterization of crossbar arrays and cross-point structures with Cu containing Ge0.3Se0.7 and SiOx buffer layer stack as an active material sandwiched between an inert Pt bottom and an oxidizable Cu top electrode. Essential characteristics for the future non-volatile memories including high R-off/R-on ratio of similar to 10(4) high retention ability at elevated temperature and sufficient endurance up to 5 x 10(3) cycles are presented. The possibility to write the memory cells with few nA is promising for low power consumption applications. (C) 2009 Elsevier B.V. All rights reserved.
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000004668 65320 $$2Author$$aMemory
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000004668 65320 $$2Author$$aChalcogenide
000004668 7001_ $$0P:(DE-Juel1)VDB55622$$aMeier, M.$$b1$$uFZJ
000004668 7001_ $$0P:(DE-Juel1)VDB26957$$aRüdiger, A.$$b2$$uFZJ
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000004668 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
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