Journal Article

PreJuSER-4668

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications

Soni, R.FZJ* ; Meier, M.FZJ* ; Rüdiger, A.FZJ* ; Holländer, B.FZJ* ; Kügeler, C.FZJ* ; Waser, R.FZJ*

2009
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2009.01.010

Abstract: This work presents the characterization of crossbar arrays and cross-point structures with Cu containing Ge0.3Se0.7 and SiOx buffer layer stack as an active material sandwiched between an inert Pt bottom and an oxidizable Cu top electrode. Essential characteristics for the future non-volatile memories including high R-off/R-on ratio of similar to 10(4) high retention ability at elevated temperature and sufficient endurance up to 5 x 10(3) cycles are presented. The possibility to write the memory cells with few nA is promising for low power consumption applications. (C) 2009 Elsevier B.V. All rights reserved.

Keyword(s): J ; Memory (auto) ; Crossbar (auto) ; Chalcogenide (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-6)
2. Halbleiter-Nanoelektronik (IBN-1)
3. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2009

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