TY  - JOUR
AU  - Soni, R.
AU  - Meier, M.
AU  - Rüdiger, A.
AU  - Holländer, B.
AU  - Kügeler, C.
AU  - Waser, R.
TI  - Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications
JO  - Microelectronic engineering
VL  - 86
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - PreJuSER-4668
SP  - 1054 - 1056
PY  - 2009
N1  - Record converted from VDB: 12.11.2012
AB  - This work presents the characterization of crossbar arrays and cross-point structures with Cu containing Ge0.3Se0.7 and SiOx buffer layer stack as an active material sandwiched between an inert Pt bottom and an oxidizable Cu top electrode. Essential characteristics for the future non-volatile memories including high R-off/R-on ratio of similar to 10(4) high retention ability at elevated temperature and sufficient endurance up to 5 x 10(3) cycles are presented. The possibility to write the memory cells with few nA is promising for low power consumption applications. (C) 2009 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000267273300156
DO  - DOI:10.1016/j.mee.2009.01.010
UR  - https://juser.fz-juelich.de/record/4668
ER  -