TY  - JOUR
AU  - Munoz, A. G.
AU  - Staikov, G.
TI  - Electrodeposition of Co on Oxide Modified p-Si Surfaces
JO  - Electrochimica acta
VL  - 51
SN  - 0013-4686
CY  - New York, NY [u.a.]
PB  - Elsevier
M1  - PreJuSER-46888
SP  - 2836 - 2844
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - The influence of the first stages of anodic oxidation of p-Si on the mechanism of Co deposition was studied by means of electrochemical techniques and AFM. The surface transformation during the formation of a thin oxide layer on hydrogen-terminated Si was followed by capacitance measurements and related to changes of the electrodeposition mechanism. It was observed that the reduction of Co2+ on oxide free p-Si occurs at the negative side of the flat band potential involving the discharge of photogenerated electrons at the conduction band edge and/or surface state levels. The fort-nation of an oxide film of d(ox) < 2 nm introduces an energy barrier that increases the overpotential for electrodeposition. The morphology of deposits, on the other hand, changes from layer like to grain like after surface oxidation, indicating a substantial modification of the nature and density of nucleation sites. The number density of deposited clusters on an oxidized surface showed a proportionality with the field strength in the oxide, indicating the presence of a certain high-field assisted mechanism in the generation of active sites. (c) 2005 Elsevier Ltd. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000236478800006
DO  - DOI:10.1016/j.electacta.2005.08.015
UR  - https://juser.fz-juelich.de/record/46888
ER  -