Journal Article

PreJuSER-46888

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrodeposition of Co on Oxide Modified p-Si Surfaces

Munoz, A. G.FZJ* ; Staikov, G.FZJ*

2006
Elsevier New York, NY [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.electacta.2005.08.015

Abstract: The influence of the first stages of anodic oxidation of p-Si on the mechanism of Co deposition was studied by means of electrochemical techniques and AFM. The surface transformation during the formation of a thin oxide layer on hydrogen-terminated Si was followed by capacitance measurements and related to changes of the electrodeposition mechanism. It was observed that the reduction of Co2+ on oxide free p-Si occurs at the negative side of the flat band potential involving the discharge of photogenerated electrons at the conduction band edge and/or surface state levels. The fort-nation of an oxide film of d(ox) < 2 nm introduces an energy barrier that increases the overpotential for electrodeposition. The morphology of deposits, on the other hand, changes from layer like to grain like after surface oxidation, indicating a substantial modification of the nature and density of nucleation sites. The number density of deposited clusters on an oxidized surface showed a proportionality with the field strength in the oxide, indicating the presence of a certain high-field assisted mechanism in the generation of active sites. (c) 2005 Elsevier Ltd. All rights reserved.

Keyword(s): J ; p-Si (auto) ; electrodeposition (auto) ; Co (auto) ; photoelectrodes (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Grenzflächen und Vakuumtechnologien (ISG-3)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006

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