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@ARTICLE{Munoz:46888,
      author       = {Munoz, A. G. and Staikov, G.},
      title        = {{E}lectrodeposition of {C}o on {O}xide {M}odified p-{S}i
                      {S}urfaces},
      journal      = {Electrochimica acta},
      volume       = {51},
      issn         = {0013-4686},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-46888},
      pages        = {2836 - 2844},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The influence of the first stages of anodic oxidation of
                      p-Si on the mechanism of Co deposition was studied by means
                      of electrochemical techniques and AFM. The surface
                      transformation during the formation of a thin oxide layer on
                      hydrogen-terminated Si was followed by capacitance
                      measurements and related to changes of the electrodeposition
                      mechanism. It was observed that the reduction of Co2+ on
                      oxide free p-Si occurs at the negative side of the flat band
                      potential involving the discharge of photogenerated
                      electrons at the conduction band edge and/or surface state
                      levels. The fort-nation of an oxide film of d(ox) < 2 nm
                      introduces an energy barrier that increases the
                      overpotential for electrodeposition. The morphology of
                      deposits, on the other hand, changes from layer like to
                      grain like after surface oxidation, indicating a substantial
                      modification of the nature and density of nucleation sites.
                      The number density of deposited clusters on an oxidized
                      surface showed a proportionality with the field strength in
                      the oxide, indicating the presence of a certain high-field
                      assisted mechanism in the generation of active sites. (c)
                      2005 Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3 / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000236478800006},
      doi          = {10.1016/j.electacta.2005.08.015},
      url          = {https://juser.fz-juelich.de/record/46888},
}