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| 001 | 46888 | ||
| 005 | 20180210130517.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.electacta.2005.08.015 |
| 024 | 7 | _ | |2 WOS |a WOS:000236478800006 |
| 037 | _ | _ | |a PreJuSER-46888 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Electrochemistry |
| 100 | 1 | _ | |a Munoz, A. G. |b 0 |u FZJ |0 P:(DE-Juel1)VDB60931 |
| 245 | _ | _ | |a Electrodeposition of Co on Oxide Modified p-Si Surfaces |
| 260 | _ | _ | |a New York, NY [u.a.] |b Elsevier |c 2006 |
| 300 | _ | _ | |a 2836 - 2844 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Electrochimica Acta |x 0013-4686 |0 1776 |v 51 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The influence of the first stages of anodic oxidation of p-Si on the mechanism of Co deposition was studied by means of electrochemical techniques and AFM. The surface transformation during the formation of a thin oxide layer on hydrogen-terminated Si was followed by capacitance measurements and related to changes of the electrodeposition mechanism. It was observed that the reduction of Co2+ on oxide free p-Si occurs at the negative side of the flat band potential involving the discharge of photogenerated electrons at the conduction band edge and/or surface state levels. The fort-nation of an oxide film of d(ox) < 2 nm introduces an energy barrier that increases the overpotential for electrodeposition. The morphology of deposits, on the other hand, changes from layer like to grain like after surface oxidation, indicating a substantial modification of the nature and density of nucleation sites. The number density of deposited clusters on an oxidized surface showed a proportionality with the field strength in the oxide, indicating the presence of a certain high-field assisted mechanism in the generation of active sites. (c) 2005 Elsevier Ltd. All rights reserved. |
| 536 | _ | _ | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a p-Si |
| 653 | 2 | 0 | |2 Author |a electrodeposition |
| 653 | 2 | 0 | |2 Author |a Co |
| 653 | 2 | 0 | |2 Author |a photoelectrodes |
| 700 | 1 | _ | |a Staikov, G. |b 1 |u FZJ |0 P:(DE-Juel1)VDB13645 |
| 773 | _ | _ | |a 10.1016/j.electacta.2005.08.015 |g Vol. 51, p. 2836 - 2844 |p 2836 - 2844 |q 51<2836 - 2844 |0 PERI:(DE-600)1483548-4 |t Electrochimica acta |v 51 |y 2006 |x 0013-4686 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.electacta.2005.08.015 |
| 909 | C | O | |o oai:juser.fz-juelich.de:46888 |p VDB |
| 913 | 1 | _ | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 |
| 914 | 1 | _ | |y 2006 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)73882 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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