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000047376 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000047376 084__ $$2WoS$$aMaterials Science, Coatings & Films
000047376 084__ $$2WoS$$aPhysics, Applied
000047376 084__ $$2WoS$$aPhysics, Condensed Matter
000047376 1001_ $$0P:(DE-Juel1)VDB5680$$aDahmen, K.$$b0$$uFZJ
000047376 245__ $$aSteady-state surface stress induced in nobel gas sputtering
000047376 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2003
000047376 300__ $$a6 - 10
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000047376 440_0 $$05762$$aThin Solid Films$$v428$$x0040-6090
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000047376 520__ $$aWe have measured the surface stress on single crystal Cu(100) surfaces as induced by bombardment of the surface with the noble gas ions Ar, Ne and He at room temperature. Regardless of the ion type and energy, the induced stress is compressive and saturates as a function of sputter time at a value between 2 and 15 N/m. Saturation time and magnitude of the induced stress depend on the ion species and their energy. The time dependence can be accounted for by assuming a steady state thickness of a defective surface layer, which arises from a balance between sputtering and ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.
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000047376 65320 $$2Author$$aatom solid interaction
000047376 65320 $$2Author$$asputtering
000047376 65320 $$2Author$$asurface stress
000047376 65320 $$2Author$$aradiation damage
000047376 65320 $$2Author$$acopper
000047376 65320 $$2Author$$asingle crystal surfaces
000047376 7001_ $$0P:(DE-Juel1)4744$$aGiesen, M.$$b1$$uFZJ
000047376 7001_ $$0P:(DE-Juel1)VDB7599$$aIkonomov, K.$$b2$$uFZJ
000047376 7001_ $$0P:(DE-Juel1)VDB5414$$aIbach, H.$$b3$$uFZJ
000047376 7001_ $$0P:(DE-Juel1)VDB5995$$aStarbova, K.$$b4$$uFZJ
000047376 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/S0040-6090(02)01182-3$$gVol. 428, p. 6 - 10$$p6 - 10$$q428<6 - 10$$tThin solid films$$v428$$x0040-6090$$y2003
000047376 8567_ $$uhttp://dx.doi.org/10.1016/S0040-6090(02)01182-3
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000047376 9141_ $$y2003
000047376 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000047376 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000047376 9201_ $$0I:(DE-Juel1)VDB44$$d31.12.2001$$gISG$$kISG-4$$lInstitut für biologisch-anorganische Grenzflächen$$x1
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