001     47376
005     20200402210008.0
024 7 _ |2 DOI
|a 10.1016/S0040-6090(02)01182-3
024 7 _ |2 WOS
|a WOS:000182500500003
037 _ _ |a PreJuSER-47376
041 _ _ |a eng
082 _ _ |a 070
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Dahmen, K.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB5680
245 _ _ |a Steady-state surface stress induced in nobel gas sputtering
260 _ _ |a Amsterdam [u.a.]
|b Elsevier
|c 2003
300 _ _ |a 6 - 10
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Thin Solid Films
|x 0040-6090
|0 5762
|v 428
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have measured the surface stress on single crystal Cu(100) surfaces as induced by bombardment of the surface with the noble gas ions Ar, Ne and He at room temperature. Regardless of the ion type and energy, the induced stress is compressive and saturates as a function of sputter time at a value between 2 and 15 N/m. Saturation time and magnitude of the induced stress depend on the ion species and their energy. The time dependence can be accounted for by assuming a steady state thickness of a defective surface layer, which arises from a balance between sputtering and ion implantation. (C) 2002 Elsevier Science B.V. All rights reserved.
536 _ _ |a Kondensierte Materie
|c M02
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a atom solid interaction
653 2 0 |2 Author
|a sputtering
653 2 0 |2 Author
|a surface stress
653 2 0 |2 Author
|a radiation damage
653 2 0 |2 Author
|a copper
653 2 0 |2 Author
|a single crystal surfaces
700 1 _ |a Giesen, M.
|b 1
|u FZJ
|0 P:(DE-Juel1)4744
700 1 _ |a Ikonomov, K.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB7599
700 1 _ |a Ibach, H.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB5414
700 1 _ |a Starbova, K.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5995
773 _ _ |a 10.1016/S0040-6090(02)01182-3
|g Vol. 428, p. 6 - 10
|p 6 - 10
|q 428<6 - 10
|0 PERI:(DE-600)1482896-0
|t Thin solid films
|v 428
|y 2003
|x 0040-6090
856 7 _ |u http://dx.doi.org/10.1016/S0040-6090(02)01182-3
909 C O |o oai:juser.fz-juelich.de:47376
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913 1 _ |k M02
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914 1 _ |y 2003
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
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920 1 _ |k ISG-4
|l Institut für biologisch-anorganische Grenzflächen
|d 31.12.2001
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980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IBI-2-20200312
981 _ _ |a I:(DE-Juel1)PGI-3-20110106
981 _ _ |a I:(DE-Juel1)ICS-7-20110106


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