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000047396 084__ $$2WoS$$aPhysics, Applied
000047396 1001_ $$0P:(DE-Juel1)VDB3071$$aRegnery, S.$$b0$$uFZJ
000047396 245__ $$aSrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates
000047396 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2005
000047396 300__ $$a073521
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000047396 520__ $$aSrTa2O6 thin films with thickness between 6 and 150 nm were deposited by metal-organic chemical vapor deposition in a multiwafer planetary reactor. The monomolecular precursor, strontium-tantalum-(methoxyethoxy)-ethoxide, was dissolved in toluene and injected by a liquid delivery system. A rather narrow process window for the deposition of stoichiometric SrTa2O6 was found for this precursor at low pressures and a susceptor temperature around 500 degrees C. Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si substrates. The as-deposited films were x-ray amorphous and could be crystallized by postannealing at a temperature >= 700 degrees C. The distorted tetragonal tungsten bronze phase of SrTa2O6 was dominating within a broad range of compositions (Sr/Ta: 0.4-0.7) and a perovskite-type phase was additionally observed for Sr/Ta>0.7 and predominated for Sr/Ta>1. The electrical properties have been investigated with metal-insulator-metal and metal-insulator-semiconductor capacitors after sputter deposition of Pt top electrodes. The amorphous films had a dielectric constant K in the range of 35-45 and low leakage currents. For stoichiometric SrTa2O6 the dielectric permittivity reached values of K=100-110, but the leakage currents were increased. Remarkably, the permittivity is not very sensitive to deviations from the exact stoichiometry of the SrTa2O6 phase (Sr/Ta: 0.4-0.7), but a decrease to values of K=30-40 is observed along with the transition to the perovskite phase at high Sr contents. (C) 2005 American Institute of Physics.
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000047396 7001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b1$$uFZJ
000047396 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b2$$uFZJ
000047396 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
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000047396 8567_ $$uhttp://hdl.handle.net/2128/1008$$uhttp://dx.doi.org/10.1063/1.1873033
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