Journal Article

PreJuSER-47396

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates

Regnery, S.FZJ* ; Thomas, R.FZJ* ; Ehrhart, P.FZJ* ; Waser, R.FZJ*

2005
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1008  doi:10.1063/1.1873033

Abstract: SrTa2O6 thin films with thickness between 6 and 150 nm were deposited by metal-organic chemical vapor deposition in a multiwafer planetary reactor. The monomolecular precursor, strontium-tantalum-(methoxyethoxy)-ethoxide, was dissolved in toluene and injected by a liquid delivery system. A rather narrow process window for the deposition of stoichiometric SrTa2O6 was found for this precursor at low pressures and a susceptor temperature around 500 degrees C. Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si substrates. The as-deposited films were x-ray amorphous and could be crystallized by postannealing at a temperature >= 700 degrees C. The distorted tetragonal tungsten bronze phase of SrTa2O6 was dominating within a broad range of compositions (Sr/Ta: 0.4-0.7) and a perovskite-type phase was additionally observed for Sr/Ta>0.7 and predominated for Sr/Ta>1. The electrical properties have been investigated with metal-insulator-metal and metal-insulator-semiconductor capacitors after sputter deposition of Pt top electrodes. The amorphous films had a dielectric constant K in the range of 35-45 and low leakage currents. For stoichiometric SrTa2O6 the dielectric permittivity reached values of K=100-110, but the leakage currents were increased. Remarkably, the permittivity is not very sensitive to deviations from the exact stoichiometry of the SrTa2O6 phase (Sr/Ta: 0.4-0.7), but a decrease to values of K=30-40 is observed along with the transition to the perovskite phase at high Sr contents. (C) 2005 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://jap.aip.org

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