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@ARTICLE{Regnery:47396,
      author       = {Regnery, S. and Thomas, R. and Ehrhart, P. and Waser, R.},
      title        = {{S}r{T}a2{O}6 thin films for high-{K} dielectric
                      applications grown by chemical vapor deposition on different
                      substrates},
      journal      = {Journal of applied physics},
      volume       = {97},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-47396},
      pages        = {073521},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {SrTa2O6 thin films with thickness between 6 and 150 nm were
                      deposited by metal-organic chemical vapor deposition in a
                      multiwafer planetary reactor. The monomolecular precursor,
                      strontium-tantalum-(methoxyethoxy)-ethoxide, was dissolved
                      in toluene and injected by a liquid delivery system. A
                      rather narrow process window for the deposition of
                      stoichiometric SrTa2O6 was found for this precursor at low
                      pressures and a susceptor temperature around 500 degrees C.
                      Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si
                      substrates. The as-deposited films were x-ray amorphous and
                      could be crystallized by postannealing at a temperature >=
                      700 degrees C. The distorted tetragonal tungsten bronze
                      phase of SrTa2O6 was dominating within a broad range of
                      compositions (Sr/Ta: 0.4-0.7) and a perovskite-type phase
                      was additionally observed for Sr/Ta>0.7 and predominated for
                      Sr/Ta>1. The electrical properties have been investigated
                      with metal-insulator-metal and metal-insulator-semiconductor
                      capacitors after sputter deposition of Pt top electrodes.
                      The amorphous films had a dielectric constant K in the range
                      of 35-45 and low leakage currents. For stoichiometric
                      SrTa2O6 the dielectric permittivity reached values of
                      K=100-110, but the leakage currents were increased.
                      Remarkably, the permittivity is not very sensitive to
                      deviations from the exact stoichiometry of the SrTa2O6 phase
                      (Sr/Ta: 0.4-0.7), but a decrease to values of K=30-40 is
                      observed along with the transition to the perovskite phase
                      at high Sr contents. (C) 2005 American Institute of
                      Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000228287300032},
      doi          = {10.1063/1.1873033},
      url          = {https://juser.fz-juelich.de/record/47396},
}