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| Home > Publications database > SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates > print |
| 001 | 47396 | ||
| 005 | 20200423204229.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://jap.aip.org |
| 024 | 7 | _ | |a 10.1063/1.1873033 |2 DOI |
| 024 | 7 | _ | |a WOS:000228287300032 |2 WOS |
| 024 | 7 | _ | |a 2128/1008 |2 Handle |
| 037 | _ | _ | |a PreJuSER-47396 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Regnery, S. |b 0 |u FZJ |0 P:(DE-Juel1)VDB3071 |
| 245 | _ | _ | |a SrTa2O6 thin films for high-K dielectric applications grown by chemical vapor deposition on different substrates |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2005 |
| 300 | _ | _ | |a 073521 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Applied Physics |x 0021-8979 |0 3051 |v 97 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a SrTa2O6 thin films with thickness between 6 and 150 nm were deposited by metal-organic chemical vapor deposition in a multiwafer planetary reactor. The monomolecular precursor, strontium-tantalum-(methoxyethoxy)-ethoxide, was dissolved in toluene and injected by a liquid delivery system. A rather narrow process window for the deposition of stoichiometric SrTa2O6 was found for this precursor at low pressures and a susceptor temperature around 500 degrees C. Films were grown on Pt/TiO2/SiO2/Si, TiNx/Si, and SiO2/Si substrates. The as-deposited films were x-ray amorphous and could be crystallized by postannealing at a temperature >= 700 degrees C. The distorted tetragonal tungsten bronze phase of SrTa2O6 was dominating within a broad range of compositions (Sr/Ta: 0.4-0.7) and a perovskite-type phase was additionally observed for Sr/Ta>0.7 and predominated for Sr/Ta>1. The electrical properties have been investigated with metal-insulator-metal and metal-insulator-semiconductor capacitors after sputter deposition of Pt top electrodes. The amorphous films had a dielectric constant K in the range of 35-45 and low leakage currents. For stoichiometric SrTa2O6 the dielectric permittivity reached values of K=100-110, but the leakage currents were increased. Remarkably, the permittivity is not very sensitive to deviations from the exact stoichiometry of the SrTa2O6 phase (Sr/Ta: 0.4-0.7), but a decrease to values of K=30-40 is observed along with the transition to the perovskite phase at high Sr contents. (C) 2005 American Institute of Physics. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
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| 700 | 1 | _ | |a Thomas, R. |b 1 |u FZJ |0 P:(DE-Juel1)VDB35139 |
| 700 | 1 | _ | |a Ehrhart, P. |b 2 |u FZJ |0 P:(DE-Juel1)VDB3072 |
| 700 | 1 | _ | |a Waser, R. |b 3 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1063/1.1873033 |g Vol. 97, p. 073521 |p 073521 |q 97<073521 |0 PERI:(DE-600)1476463-5 |t Journal of applied physics |v 97 |y 2005 |x 0021-8979 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.1873033 |u http://hdl.handle.net/2128/1008 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/47396/files/74750.pdf |y OpenAccess |
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| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/47396/files/74750.jpg?subformat=icon-640 |x icon-640 |y OpenAccess |
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