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000049718 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000049718 084__ $$2WoS$$aPhysics, Condensed Matter
000049718 1001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b0$$uFZJ
000049718 245__ $$aHigh-k dielectric materials by metalorganic chemical vapor deposition: growth and characterization
000049718 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2005
000049718 300__ $$a111
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000049718 440_0 $$02058$$aFerroelectrics$$v327$$x0015-0193
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000049718 520__ $$aTwo novel mononuclear mixed alkoxide compounds of Ti and Zr, [Ti(OPri)(2) (tbaoac)(2)] and [Zr(OPri)(2) (tbaoac)(2)], were synthesised and characterised. These complexes are highly soluble and possess superior thermal properties showing promising characteristics as precursors for MOCVD of oxide thin films. Results are presented for thin films, which were deposited in a liquid injection metal-organic chemical vapour deposition production tool. Special emphasis is given to the properties of ZrO2 thin films within MIS structures as proposed for gate oxide applications and to the compatibility of the new Ti precursor with a standard Sr(thd)(2) precursor for low temperature deposition of SrTiO3.
000049718 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000049718 65320 $$2Author$$aMOCVD
000049718 65320 $$2Author$$aprecursors
000049718 65320 $$2Author$$aTiO2
000049718 65320 $$2Author$$aZrO2
000049718 65320 $$2Author$$aSrTiO3
000049718 65320 $$2Author$$ahigh-k dielectrics
000049718 7001_ $$0P:(DE-Juel1)VDB3071$$aRegnery, S.$$b1$$uFZJ
000049718 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b2$$uFZJ
000049718 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000049718 7001_ $$0P:(DE-HGF)0$$aPatil, U.$$b4
000049718 7001_ $$0P:(DE-Juel1)VDB43056$$aBhakta, R.$$b5$$uFZJ
000049718 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b6
000049718 773__ $$0PERI:(DE-600)2042895-9$$a10.1080/00150190500316531$$gVol. 327, p. 111$$p111$$q327<111$$tFerroelectrics$$v327$$x0015-0193$$y2005
000049718 8567_ $$uhttp://dx.doi.org/10.1080/00150190500316531
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000049718 9141_ $$y2005
000049718 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000049718 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000049718 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
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