Journal Article

PreJuSER-49718

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High-k dielectric materials by metalorganic chemical vapor deposition: growth and characterization

Thomas, R.FZJ* ; Regnery, S.FZJ* ; Ehrhart, P.FZJ* ; Waser, R.FZJ* ; Patil, U. ; Bhakta, R.FZJ* ; Devi, A.

2005
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/00150190500316531

Abstract: Two novel mononuclear mixed alkoxide compounds of Ti and Zr, [Ti(OPri)(2) (tbaoac)(2)] and [Zr(OPri)(2) (tbaoac)(2)], were synthesised and characterised. These complexes are highly soluble and possess superior thermal properties showing promising characteristics as precursors for MOCVD of oxide thin films. Results are presented for thin films, which were deposited in a liquid injection metal-organic chemical vapour deposition production tool. Special emphasis is given to the properties of ZrO2 thin films within MIS structures as proposed for gate oxide applications and to the compatibility of the new Ti precursor with a standard Sr(thd)(2) precursor for low temperature deposition of SrTiO3.

Keyword(s): J ; MOCVD (auto) ; precursors (auto) ; TiO2 (auto) ; ZrO2 (auto) ; SrTiO3 (auto) ; high-k dielectrics (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005

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