TY  - JOUR
AU  - Thomas, R.
AU  - Regnery, S.
AU  - Ehrhart, P.
AU  - Waser, R.
AU  - Patil, U.
AU  - Bhakta, R.
AU  - Devi, A.
TI  - High-k dielectric materials by metalorganic chemical vapor deposition: growth and characterization
JO  - Ferroelectrics
VL  - 327
SN  - 0015-0193
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-49718
SP  - 111
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - Two novel mononuclear mixed alkoxide compounds of Ti and Zr, [Ti(OPri)(2) (tbaoac)(2)] and [Zr(OPri)(2) (tbaoac)(2)], were synthesised and characterised. These complexes are highly soluble and possess superior thermal properties showing promising characteristics as precursors for MOCVD of oxide thin films. Results are presented for thin films, which were deposited in a liquid injection metal-organic chemical vapour deposition production tool. Special emphasis is given to the properties of ZrO2 thin films within MIS structures as proposed for gate oxide applications and to the compatibility of the new Ti precursor with a standard Sr(thd)(2) precursor for low temperature deposition of SrTiO3.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000234250400017
DO  - DOI:10.1080/00150190500316531
UR  - https://juser.fz-juelich.de/record/49718
ER  -