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@ARTICLE{Thomas:49718,
author = {Thomas, R. and Regnery, S. and Ehrhart, P. and Waser, R.
and Patil, U. and Bhakta, R. and Devi, A.},
title = {{H}igh-k dielectric materials by metalorganic chemical
vapor deposition: growth and characterization},
journal = {Ferroelectrics},
volume = {327},
issn = {0015-0193},
address = {London [u.a.]},
publisher = {Taylor $\&$ Francis},
reportid = {PreJuSER-49718},
pages = {111},
year = {2005},
note = {Record converted from VDB: 12.11.2012},
abstract = {Two novel mononuclear mixed alkoxide compounds of Ti and
Zr, [Ti(OPri)(2) (tbaoac)(2)] and [Zr(OPri)(2) (tbaoac)(2)],
were synthesised and characterised. These complexes are
highly soluble and possess superior thermal properties
showing promising characteristics as precursors for MOCVD of
oxide thin films. Results are presented for thin films,
which were deposited in a liquid injection metal-organic
chemical vapour deposition production tool. Special emphasis
is given to the properties of ZrO2 thin films within MIS
structures as proposed for gate oxide applications and to
the compatibility of the new Ti precursor with a standard
Sr(thd)(2) precursor for low temperature deposition of
SrTiO3.},
keywords = {J (WoSType)},
cin = {IFF-IEM / CNI},
ddc = {530},
cid = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Multidisciplinary / Physics, Condensed
Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000234250400017},
doi = {10.1080/00150190500316531},
url = {https://juser.fz-juelich.de/record/49718},
}