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001     49728
005     20200423204301.0
017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1888046
|2 DOI
024 7 _ |a WOS:000229155600047
|2 WOS
024 7 _ |a 2128/1015
|2 Handle
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037 _ _ |a PreJuSER-49728
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Darlinski, G.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Mechanical force sensors using organic thin-film transistors
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2005
300 _ _ |a 93708
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 97
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect. (C) 2005 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Bottger, U.
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700 1 _ |a Waser, R.
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700 1 _ |a Klauk, H.
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700 1 _ |a Halik, M.
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700 1 _ |a Zschieschang, U.
|b 5
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700 1 _ |a Schmid, G.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Dehm, C.
|b 7
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773 _ _ |a 10.1063/1.1888046
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856 7 _ |u http://dx.doi.org/10.1063/1.1888046
|u http://hdl.handle.net/2128/1015
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913 1 _ |k I01
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920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
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