Journal Article PreJuSER-49728

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Mechanical force sensors using organic thin-film transistors

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2005
American Institute of Physics Melville, NY

Journal of applied physics 97, 93708 () [10.1063/1.1888046]

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Abstract: The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect. (C) 2005 American Institute of Physics.

Keyword(s): J

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Note: Record converted from VDB: 12.11.2012

Contributing Institute(s):
  1. Elektronische Materialien (IFF-IEM)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005
Notes: This version is available at the following Publisher URL: http://jap.aip.org
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 Record created 2012-11-13, last modified 2020-04-23


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