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Journal Article | PreJuSER-49728 |
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2005
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/1015 doi:10.1063/1.1888046
Abstract: The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect. (C) 2005 American Institute of Physics.
Keyword(s): J
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