%0 Journal Article
%A Moert, M.
%A Mikolajick, T.
%A Schindler, G.
%A Nagel, D. R.
%A Kasko, I.
%A Hartner, W.
%A Dehm, C.
%A Kohlstedt, H.
%A Waser, R.
%T Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
%J Thin solid films
%V 473
%@ 0040-6090
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-49732
%P 328
%D 2005
%Z Record converted from VDB: 12.11.2012
%X The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000226169800024
%R 10.1016/j.tsf.2004.08.087
%U https://juser.fz-juelich.de/record/49732