Journal Article

PreJuSER-49732

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation

Moert, M. ; Mikolajick, T. ; Schindler, G. ; Nagel, D. R. ; Kasko, I. ; Hartner, W. ; Dehm, C. ; Kohlstedt, H.FZJ* ; Waser, R.FZJ*

2005
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.tsf.2004.08.087

Abstract: The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V.

Keyword(s): J ; ferroelectric properties (auto) ; crystallization (auto) ; electrical properties and measurements (auto) ; strontium bismuth tantalate (SBT) (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2005

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