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000049732 0247_ $$2DOI$$a10.1016/j.tsf.2004.08.087
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000049732 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000049732 084__ $$2WoS$$aMaterials Science, Coatings & Films
000049732 084__ $$2WoS$$aPhysics, Applied
000049732 084__ $$2WoS$$aPhysics, Condensed Matter
000049732 1001_ $$0P:(DE-HGF)0$$aMoert, M.$$b0
000049732 245__ $$aIntegration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
000049732 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2005
000049732 300__ $$a328
000049732 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000049732 440_0 $$05762$$aThin Solid Films$$v473$$x0040-6090
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000049732 520__ $$aThe crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V.
000049732 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000049732 65320 $$2Author$$aferroelectric properties
000049732 65320 $$2Author$$acrystallization
000049732 65320 $$2Author$$aelectrical properties and measurements
000049732 65320 $$2Author$$astrontium bismuth tantalate (SBT)
000049732 7001_ $$0P:(DE-HGF)0$$aMikolajick, T.$$b1
000049732 7001_ $$0P:(DE-HGF)0$$aSchindler, G.$$b2
000049732 7001_ $$0P:(DE-HGF)0$$aNagel, D. R.$$b3
000049732 7001_ $$0P:(DE-HGF)0$$aKasko, I.$$b4
000049732 7001_ $$0P:(DE-HGF)0$$aHartner, W.$$b5
000049732 7001_ $$0P:(DE-HGF)0$$aDehm, C.$$b6
000049732 7001_ $$0P:(DE-Juel1)VDB3107$$aKohlstedt, H.$$b7$$uFZJ
000049732 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b8$$uFZJ
000049732 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2004.08.087$$gVol. 473, p. 328$$p328$$q473<328$$tThin solid films$$v473$$x0040-6090$$y2005
000049732 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2004.08.087
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