TY  - JOUR
AU  - Moert, M.
AU  - Mikolajick, T.
AU  - Schindler, G.
AU  - Nagel, D. R.
AU  - Kasko, I.
AU  - Hartner, W.
AU  - Dehm, C.
AU  - Kohlstedt, H.
AU  - Waser, R.
TI  - Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation
JO  - Thin solid films
VL  - 473
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - PreJuSER-49732
SP  - 328
PY  - 2005
N1  - Record converted from VDB: 12.11.2012
AB  - The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000226169800024
DO  - DOI:10.1016/j.tsf.2004.08.087
UR  - https://juser.fz-juelich.de/record/49732
ER  -