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@ARTICLE{Moert:49732,
      author       = {Moert, M. and Mikolajick, T. and Schindler, G. and Nagel,
                      D. R. and Kasko, I. and Hartner, W. and Dehm, C. and
                      Kohlstedt, H. and Waser, R.},
      title        = {{I}ntegration of stacked capacitor module with ultra-thin
                      ferroelectric {S}r{B}i2{T}a2{O}9film for high density
                      ferroelectric random access memory applications at low
                      voltage operation},
      journal      = {Thin solid films},
      volume       = {473},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-49732},
      pages        = {328},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The crystallization route of thin SrBi2Ta2O9 (SBT) films
                      deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is
                      investigated at different annealing temperatures by atomic
                      force microscopy (AFM) and X-ray diffractometry (XRD). To
                      evaluate the SBT film properties for low voltage operation
                      and for high storage density (> 16 MBit), SBT is deposited
                      at different film thicknesses. Furthermore, the performance
                      of a Pt/SBT/Pt capacitor on a
                      banier-/contact-layer/polysilicon-plug architecture suitable
                      for stacked capacitor memories is investigated by
                      transmission electron microscopy (TEM)/energy dispersive
                      X-ray analysis (EDX) and electrical measurements. It is
                      shown that an oxidized and highly resistive contact layer
                      can be recovered by electrical pulses. Finally, a process
                      solution for a successful integration of 38 nm thin SBT
                      films into this structure is provided. Published by Elsevier
                      B.V.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000226169800024},
      doi          = {10.1016/j.tsf.2004.08.087},
      url          = {https://juser.fz-juelich.de/record/49732},
}