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| 024 | 7 | _ | |2 DOI |a 10.1016/j.tsf.2004.08.087 |
| 024 | 7 | _ | |2 WOS |a WOS:000226169800024 |
| 037 | _ | _ | |a PreJuSER-49732 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 070 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Moert, M. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9film for high density ferroelectric random access memory applications at low voltage operation |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2005 |
| 300 | _ | _ | |a 328 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Thin Solid Films |x 0040-6090 |0 5762 |v 473 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The crystallization route of thin SrBi2Ta2O9 (SBT) films deposited on Pt(100 run)/Ti(10 nm)/SiO2/Si substrate is investigated at different annealing temperatures by atomic force microscopy (AFM) and X-ray diffractometry (XRD). To evaluate the SBT film properties for low voltage operation and for high storage density (> 16 MBit), SBT is deposited at different film thicknesses. Furthermore, the performance of a Pt/SBT/Pt capacitor on a banier-/contact-layer/polysilicon-plug architecture suitable for stacked capacitor memories is investigated by transmission electron microscopy (TEM)/energy dispersive X-ray analysis (EDX) and electrical measurements. It is shown that an oxidized and highly resistive contact layer can be recovered by electrical pulses. Finally, a process solution for a successful integration of 38 nm thin SBT films into this structure is provided. Published by Elsevier B.V. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a ferroelectric properties |
| 653 | 2 | 0 | |2 Author |a crystallization |
| 653 | 2 | 0 | |2 Author |a electrical properties and measurements |
| 653 | 2 | 0 | |2 Author |a strontium bismuth tantalate (SBT) |
| 700 | 1 | _ | |a Mikolajick, T. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Schindler, G. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Nagel, D. R. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Kasko, I. |b 4 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Hartner, W. |b 5 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Dehm, C. |b 6 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Kohlstedt, H. |b 7 |u FZJ |0 P:(DE-Juel1)VDB3107 |
| 700 | 1 | _ | |a Waser, R. |b 8 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1016/j.tsf.2004.08.087 |g Vol. 473, p. 328 |p 328 |q 473<328 |0 PERI:(DE-600)1482896-0 |t Thin solid films |v 473 |y 2005 |x 0040-6090 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.tsf.2004.08.087 |
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| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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