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@ARTICLE{Schmitz:49739,
      author       = {Schmitz, T. and Prume, K. and Reichenberg, B. and Roelofs,
                      A. and Waser, R. and Tiedke, S.},
      title        = {{I}n-situ compensation of the parasitic capacitance for
                      nanoscale hysteresis measurements},
      journal      = {Journal of the European Ceramic Society},
      volume       = {24},
      issn         = {0955-2219},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-49739},
      pages        = {1145},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Ferroelectric capacitors of submicron sizes for nonvolatile
                      memory applications are entering the structure size of
                      nanotechnology. Therefore the signal level for hysteresis
                      measurements is getting much smaller than the influence of
                      the parasitic capacitance of the measurement setup, which is
                      caused by the cantilever of a scanning force microscope
                      (SFM) used for contacting. Our novel compensation method
                      significantly increases the signal to noise ratio by active
                      cancellation of the parasitic capacitance of the setup
                      during the measurement. From measurements and simulations
                      the parasitic capacitance of an SFM has been determined to
                      be 170 fF. This is about two orders of magnitude higher than
                      the capacitance of a ferroelectric capacitor of submicron
                      size. The new compensation method will be demonstrated on
                      single ferroelectric PbZrxTi1-xO3 (PZT) submicron
                      capacitors. (C) 2003 Elsevier Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {660},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Materials Science, Ceramics},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000189247800049},
      doi          = {10.1016/S0955-2219(03)00583-1},
      url          = {https://juser.fz-juelich.de/record/49739},
}