Journal Article

PreJuSER-49739

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png In-situ compensation of the parasitic capacitance for nanoscale hysteresis measurements

Schmitz, T. ; Prume, K. ; Reichenberg, B. ; Roelofs, A. ; Waser, R.FZJ* ; Tiedke, S.

2004
Elsevier Science Amsterdam [u.a.]

This record in other databases:  

Please use a persistent id in citations: doi:10.1016/S0955-2219(03)00583-1

Abstract: Ferroelectric capacitors of submicron sizes for nonvolatile memory applications are entering the structure size of nanotechnology. Therefore the signal level for hysteresis measurements is getting much smaller than the influence of the parasitic capacitance of the measurement setup, which is caused by the cantilever of a scanning force microscope (SFM) used for contacting. Our novel compensation method significantly increases the signal to noise ratio by active cancellation of the parasitic capacitance of the setup during the measurement. From measurements and simulations the parasitic capacitance of an SFM has been determined to be 170 fF. This is about two orders of magnitude higher than the capacitance of a ferroelectric capacitor of submicron size. The new compensation method will be demonstrated on single ferroelectric PbZrxTi1-xO3 (PZT) submicron capacitors. (C) 2003 Elsevier Ltd. All rights reserved.

Keyword(s): J ; capacitors (auto) ; electrical properties (auto) ; ferroelectric properties (auto) ; non-destructive evaluation (auto) ; PZT (auto)

Note: Record converted from VDB: 12.11.2012

---

Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2004
Notes: Nachtrag

---