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| 001 | 49739 | ||
| 005 | 20180211182741.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0955-2219(03)00583-1 |
| 024 | 7 | _ | |2 WOS |a WOS:000189247800049 |
| 037 | _ | _ | |a PreJuSER-49739 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 660 |
| 084 | _ | _ | |2 WoS |a Materials Science, Ceramics |
| 100 | 1 | _ | |a Schmitz, T. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a In-situ compensation of the parasitic capacitance for nanoscale hysteresis measurements |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier Science |c 2004 |
| 300 | _ | _ | |a 1145 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of the European Ceramic Society |x 0955-2219 |0 3891 |v 24 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a Ferroelectric capacitors of submicron sizes for nonvolatile memory applications are entering the structure size of nanotechnology. Therefore the signal level for hysteresis measurements is getting much smaller than the influence of the parasitic capacitance of the measurement setup, which is caused by the cantilever of a scanning force microscope (SFM) used for contacting. Our novel compensation method significantly increases the signal to noise ratio by active cancellation of the parasitic capacitance of the setup during the measurement. From measurements and simulations the parasitic capacitance of an SFM has been determined to be 170 fF. This is about two orders of magnitude higher than the capacitance of a ferroelectric capacitor of submicron size. The new compensation method will be demonstrated on single ferroelectric PbZrxTi1-xO3 (PZT) submicron capacitors. (C) 2003 Elsevier Ltd. All rights reserved. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a capacitors |
| 653 | 2 | 0 | |2 Author |a electrical properties |
| 653 | 2 | 0 | |2 Author |a ferroelectric properties |
| 653 | 2 | 0 | |2 Author |a non-destructive evaluation |
| 653 | 2 | 0 | |2 Author |a PZT |
| 700 | 1 | _ | |a Prume, K. |b 1 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Reichenberg, B. |b 2 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Roelofs, A. |b 3 |0 P:(DE-HGF)0 |
| 700 | 1 | _ | |a Waser, R. |b 4 |u FZJ |0 P:(DE-Juel1)131022 |
| 700 | 1 | _ | |a Tiedke, S. |b 5 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1016/S0955-2219(03)00583-1 |g Vol. 24, p. 1145 |p 1145 |q 24<1145 |0 PERI:(DE-600)2013983-4 |t Journal of the European Ceramic Society |v 24 |y 2004 |x 0955-2219 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/S0955-2219(03)00583-1 |
| 909 | C | O | |o oai:juser.fz-juelich.de:49739 |p VDB |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |a Nachtrag |y 2004 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-IEM |l Elektronische Materialien |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB321 |x 0 |
| 920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
| 970 | _ | _ | |a VDB:(DE-Juel1)77791 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)VDB381 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 981 | _ | _ | |a I:(DE-Juel1)VDB381 |
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