%0 Journal Article
%A Ottaviano, L.
%A Passacantando, M.
%A Picozzi, S.
%A Continenza, A.
%A Gunnella, R.
%A Verna, A.
%A Bihlmayer, G.
%A Impellizzeri, G.
%A Priolo, F.
%T Phase separation and dilution in implanted Mn_xGe_(1-x)alloys
%J Applied physics letters
%V 88
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-50521
%P 061907
%D 2006
%Z Record converted from VDB: 12.11.2012
%X The structural and electronic properties of MnxGe1-x alloys (x <= 0.15) fabricated by ion implantation are investigated by means of x-ray diffraction and synchrotron radiation photoemission spectroscopy. The diffraction patterns point to the presence of ferromagnetic Mn5Ge3 nanoparticles; however, valence band spectra, interpreted by means of accurate ab initio calculations including Hubbard-like correlations, show clear fingerprints of an effective substitutional Mn dilution in the Ge semiconducting host. (c) 2006 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000235252800033
%R 10.1063/1.2171485
%U https://juser.fz-juelich.de/record/50521