Journal Article

PreJuSER-50521

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Phase separation and dilution in implanted Mn_xGe_(1-x)alloys

Ottaviano, L. ; Passacantando, M. ; Picozzi, S. ; Continenza, A. ; Gunnella, R. ; Verna, A. ; Bihlmayer, G.FZJ* ; Impellizzeri, G. ; Priolo, F.

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/1432  doi:10.1063/1.2171485

Abstract: The structural and electronic properties of MnxGe1-x alloys (x <= 0.15) fabricated by ion implantation are investigated by means of x-ray diffraction and synchrotron radiation photoemission spectroscopy. The diffraction patterns point to the presence of ferromagnetic Mn5Ge3 nanoparticles; however, valence band spectra, interpreted by means of accurate ab initio calculations including Hubbard-like correlations, show clear fingerprints of an effective substitutional Mn dilution in the Ge semiconducting host. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Theorie I (IFF-TH-I)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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