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017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.2171485
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024 7 _ |a WOS:000235252800033
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024 7 _ |a 2128/1432
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|a Physics, Applied
100 1 _ |a Ottaviano, L.
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245 _ _ |a Phase separation and dilution in implanted Mn_xGe_(1-x)alloys
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2006
300 _ _ |a 061907
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 88
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The structural and electronic properties of MnxGe1-x alloys (x <= 0.15) fabricated by ion implantation are investigated by means of x-ray diffraction and synchrotron radiation photoemission spectroscopy. The diffraction patterns point to the presence of ferromagnetic Mn5Ge3 nanoparticles; however, valence band spectra, interpreted by means of accurate ab initio calculations including Hubbard-like correlations, show clear fingerprints of an effective substitutional Mn dilution in the Ge semiconducting host. (c) 2006 American Institute of Physics.
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700 1 _ |a Passacantando, M.
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700 1 _ |a Picozzi, S.
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700 1 _ |a Continenza, A.
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700 1 _ |a Gunnella, R.
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700 1 _ |a Verna, A.
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700 1 _ |a Bihlmayer, G.
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700 1 _ |a Impellizzeri, G.
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700 1 _ |a Priolo, F.
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773 _ _ |a 10.1063/1.2171485
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856 7 _ |u http://dx.doi.org/10.1063/1.2171485
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