%0 Journal Article
%A Patil, U.
%A Thomas, R.
%A Milanov, A.
%A Bhakta, R.
%A Ehrhart, P.
%A Waser, R.
%A Becker, R.
%A Becker, H.-W.
%A Winter, M.
%A Merz, K.
%A Fischer, R. A.
%A Devi, A.
%T MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors
%J Chemical vapor deposition
%V 12
%@ 0948-1907
%C Weinheim
%I Wiley-VCH
%M PreJuSER-50862
%P 172
%D 2006
%Z Record converted from VDB: 12.11.2012
%X Metal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000236489900012
%R 10.1002/cvde.200506394
%U https://juser.fz-juelich.de/record/50862