Journal Article

PreJuSER-50862

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors

Patil, U. ; Thomas, R.FZJ* ; Milanov, A. ; Bhakta, R. ; Ehrhart, P.FZJ* ; Waser, R.FZJ* ; Becker, R. ; Becker, H.-W. ; Winter, M. ; Merz, K. ; Fischer, R. A. ; Devi, A.

2006
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/cvde.200506394

Abstract: Metal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications.

Keyword(s): J ; HfO2 (auto) ; high-kappa dielectrics (auto) ; metal-organic precursors (auto) ; MOCVD (auto) ; ZrO2 (auto)

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Elektronische Materialien (IFF-IEM)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006

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