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000050862 084__ $$2WoS$$aElectrochemistry
000050862 084__ $$2WoS$$aMaterials Science, Coatings & Films
000050862 084__ $$2WoS$$aPhysics, Condensed Matter
000050862 1001_ $$0P:(DE-HGF)0$$aPatil, U.$$b0
000050862 245__ $$aMOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors
000050862 260__ $$aWeinheim$$bWiley-VCH$$c2006
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000050862 440_0 $$015041$$aChemical Vapor Deposition$$v12$$x0948-1907
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000050862 520__ $$aMetal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications.
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000050862 65320 $$2Author$$aHfO2
000050862 65320 $$2Author$$ahigh-kappa dielectrics
000050862 65320 $$2Author$$ametal-organic precursors
000050862 65320 $$2Author$$aMOCVD
000050862 65320 $$2Author$$aZrO2
000050862 7001_ $$0P:(DE-Juel1)VDB35139$$aThomas, R.$$b1$$uFZJ
000050862 7001_ $$0P:(DE-HGF)0$$aMilanov, A.$$b2
000050862 7001_ $$0P:(DE-HGF)0$$aBhakta, R.$$b3
000050862 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b4$$uFZJ
000050862 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
000050862 7001_ $$0P:(DE-HGF)0$$aBecker, R.$$b6
000050862 7001_ $$0P:(DE-HGF)0$$aBecker, H.-W.$$b7
000050862 7001_ $$0P:(DE-HGF)0$$aWinter, M.$$b8
000050862 7001_ $$0P:(DE-HGF)0$$aMerz, K.$$b9
000050862 7001_ $$0P:(DE-HGF)0$$aFischer, R. A.$$b10
000050862 7001_ $$0P:(DE-HGF)0$$aDevi, A.$$b11
000050862 773__ $$0PERI:(DE-600)1477693-5$$a10.1002/cvde.200506394$$gVol. 12, p. 172$$p172$$q12<172$$tChemical vapor deposition$$v12$$x0948-1907$$y2006
000050862 8567_ $$uhttp://dx.doi.org/10.1002/cvde.200506394
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