TY  - JOUR
AU  - Patil, U.
AU  - Thomas, R.
AU  - Milanov, A.
AU  - Bhakta, R.
AU  - Ehrhart, P.
AU  - Waser, R.
AU  - Becker, R.
AU  - Becker, H.-W.
AU  - Winter, M.
AU  - Merz, K.
AU  - Fischer, R. A.
AU  - Devi, A.
TI  - MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors
JO  - Chemical vapor deposition
VL  - 12
SN  - 0948-1907
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-50862
SP  - 172
PY  - 2006
N1  - Record converted from VDB: 12.11.2012
AB  - Metal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000236489900012
DO  - DOI:10.1002/cvde.200506394
UR  - https://juser.fz-juelich.de/record/50862
ER  -