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@ARTICLE{Patil:50862,
      author       = {Patil, U. and Thomas, R. and Milanov, A. and Bhakta, R. and
                      Ehrhart, P. and Waser, R. and Becker, R. and Becker, H.-W.
                      and Winter, M. and Merz, K. and Fischer, R. A. and Devi, A.},
      title        = {{MOCVD} of {Z}r{O}2 and {H}f{O}2 {T}hin {F}ilms from
                      {M}odified {M}onomeric {P}recursors},
      journal      = {Chemical vapor deposition},
      volume       = {12},
      issn         = {0948-1907},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-50862},
      pages        = {172},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Metal-organic precursors of Zr and Hf with excellent
                      vaporization characteristics and low decomposition
                      temperatures are reported. The new mixed alkoxide precursors
                      [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)]
                      (2) were synthesized by facile alcohol-exchange reactions
                      between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L=
                      tert-butylacetoacetate (tbaoac)]. The six-coordinated
                      monomeric compounds are volatile, stable in solution, and
                      less sensitive to air and moisture compared to parent
                      alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was
                      possible to grow ZrO2 and HfO2 at low deposition
                      temperatures, and the films were characterized by X-ray
                      diffraction (XRD), scanning electron microscopy (SEM),
                      atomic force microscopy (AFM), and Rutherford back
                      scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)],
                      evaluated in a rnultiwafer planetary MOCVD reactor combined
                      with a liquid delivery system, yielded ZrO2 films that show
                      promise for gate oxide applications.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Electrochemistry / Materials Science, Coatings $\&$ Films /
                      Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000236489900012},
      doi          = {10.1002/cvde.200506394},
      url          = {https://juser.fz-juelich.de/record/50862},
}