001     50862
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024 7 _ |2 DOI
|a 10.1002/cvde.200506394
024 7 _ |2 WOS
|a WOS:000236489900012
037 _ _ |a PreJuSER-50862
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Electrochemistry
084 _ _ |2 WoS
|a Materials Science, Coatings & Films
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Patil, U.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors
260 _ _ |a Weinheim
|b Wiley-VCH
|c 2006
300 _ _ |a 172
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Chemical Vapor Deposition
|x 0948-1907
|0 15041
|v 12
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Metal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications.
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650 _ 7 |a J
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653 2 0 |2 Author
|a HfO2
653 2 0 |2 Author
|a high-kappa dielectrics
653 2 0 |2 Author
|a metal-organic precursors
653 2 0 |2 Author
|a MOCVD
653 2 0 |2 Author
|a ZrO2
700 1 _ |a Thomas, R.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB35139
700 1 _ |a Milanov, A.
|b 2
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700 1 _ |a Bhakta, R.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Ehrhart, P.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB3072
700 1 _ |a Waser, R.
|b 5
|u FZJ
|0 P:(DE-Juel1)131022
700 1 _ |a Becker, R.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Becker, H.-W.
|b 7
|0 P:(DE-HGF)0
700 1 _ |a Winter, M.
|b 8
|0 P:(DE-HGF)0
700 1 _ |a Merz, K.
|b 9
|0 P:(DE-HGF)0
700 1 _ |a Fischer, R. A.
|b 10
|0 P:(DE-HGF)0
700 1 _ |a Devi, A.
|b 11
|0 P:(DE-HGF)0
773 _ _ |a 10.1002/cvde.200506394
|g Vol. 12, p. 172
|p 172
|q 12<172
|0 PERI:(DE-600)1477693-5
|t Chemical vapor deposition
|v 12
|y 2006
|x 0948-1907
856 7 _ |u http://dx.doi.org/10.1002/cvde.200506394
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914 1 _ |y 2006
915 _ _ |0 StatID:(DE-HGF)0010
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|d 31.12.2006
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