Home > Publications database > MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors > print |
001 | 50862 | ||
005 | 20180211174127.0 | ||
024 | 7 | _ | |2 DOI |a 10.1002/cvde.200506394 |
024 | 7 | _ | |2 WOS |a WOS:000236489900012 |
037 | _ | _ | |a PreJuSER-50862 |
041 | _ | _ | |a eng |
082 | _ | _ | |a 540 |
084 | _ | _ | |2 WoS |a Electrochemistry |
084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
100 | 1 | _ | |a Patil, U. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors |
260 | _ | _ | |a Weinheim |b Wiley-VCH |c 2006 |
300 | _ | _ | |a 172 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a article |2 DRIVER |
440 | _ | 0 | |a Chemical Vapor Deposition |x 0948-1907 |0 15041 |v 12 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a Metal-organic precursors of Zr and Hf with excellent vaporization characteristics and low decomposition temperatures are reported. The new mixed alkoxide precursors [Zr(O'Bu)(2)(tbaoac)(2)] (1) and [Hf(O'Bu)(2)(tbaoac)(2)] (2) were synthesized by facile alcohol-exchange reactions between [M(O'Pr)(2)(L)(2)] and tert-butanol [M = Zr, Hf; L= tert-butylacetoacetate (tbaoac)]. The six-coordinated monomeric compounds are volatile, stable in solution, and less sensitive to air and moisture compared to parent alkoxides such as [Zr(O'Bu)(4)] and [Hf(O'Bu)(4)]. It was possible to grow ZrO2 and HfO2 at low deposition temperatures, and the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back scattering (RBS) analysis. [Zr(O'Bu)(2)(tbaoac)(2)], evaluated in a rnultiwafer planetary MOCVD reactor combined with a liquid delivery system, yielded ZrO2 films that show promise for gate oxide applications. |
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588 | _ | _ | |a Dataset connected to Web of Science |
650 | _ | 7 | |a J |2 WoSType |
653 | 2 | 0 | |2 Author |a HfO2 |
653 | 2 | 0 | |2 Author |a high-kappa dielectrics |
653 | 2 | 0 | |2 Author |a metal-organic precursors |
653 | 2 | 0 | |2 Author |a MOCVD |
653 | 2 | 0 | |2 Author |a ZrO2 |
700 | 1 | _ | |a Thomas, R. |b 1 |u FZJ |0 P:(DE-Juel1)VDB35139 |
700 | 1 | _ | |a Milanov, A. |b 2 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Bhakta, R. |b 3 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Ehrhart, P. |b 4 |u FZJ |0 P:(DE-Juel1)VDB3072 |
700 | 1 | _ | |a Waser, R. |b 5 |u FZJ |0 P:(DE-Juel1)131022 |
700 | 1 | _ | |a Becker, R. |b 6 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Becker, H.-W. |b 7 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Winter, M. |b 8 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Merz, K. |b 9 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Fischer, R. A. |b 10 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Devi, A. |b 11 |0 P:(DE-HGF)0 |
773 | _ | _ | |a 10.1002/cvde.200506394 |g Vol. 12, p. 172 |p 172 |q 12<172 |0 PERI:(DE-600)1477693-5 |t Chemical vapor deposition |v 12 |y 2006 |x 0948-1907 |
856 | 7 | _ | |u http://dx.doi.org/10.1002/cvde.200506394 |
909 | C | O | |o oai:juser.fz-juelich.de:50862 |p VDB |
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914 | 1 | _ | |y 2006 |
915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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920 | 1 | _ | |k CNI |l Center of Nanoelectronic Systems for Information Technology |d 14.09.2008 |g CNI |z 381 |0 I:(DE-Juel1)VDB381 |x 1 |
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