Home > Publications database > Dislocation Based Resistive Switching in Insulating Perovskites - An Opportunity for Nanoscale Non-Volatile Memories?
 
Conference Presentation (Invited) PreJuSER-51116
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Dislocation Based Resistive Switching in Insulating Perovskites - An Opportunity for Nanoscale Non-Volatile Memories?

 ;  ;  ;

2006

International Symposium on Integrated Ferroelectrics
Seminar, HawaiiHawaii, 23 Apr 20062006-04-23


Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Elektronische Materialien (IFF-IEM)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
  3. Wissenschaftlich-Technische Planung (WTP)
  4. Theorie I (IFF-TH-I)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Click to display QR Code for this record

The record appears in these collections:
Document types > Presentations > Conference Presentations
Institute Collections > PGI > PGI-7
Institute Collections > PGI > PGI-1
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-11
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508a
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English