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@ARTICLE{Kronholz:51241,
      author       = {Kronholz, S. and Karthäuser, S. and van der Hart, A. and
                      Wandlowski, Th. and Waser, R.},
      title        = {{M}etallic {N}anogaps with {A}ccess {W}indows for
                      {L}iquid-based {S}ystems},
      journal      = {Microelectronics Journal},
      volume       = {37},
      issn         = {0026-2692},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-51241},
      pages        = {591 - 594},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {A new method has been established for the reproducible
                      fabrication of high quality, metallic nanogaps on silicon
                      chips suitable for liquid based nanometer scale devices.
                      Realization of mu m structures connected to nanogaps with
                      gap sizes down to 30 nm has been achieved by a combination
                      of an optical and an electron-beam (e-beam) lithography step
                      using an optimised adhesion layer/metallic layer combination
                      (Ti/Pt/Au-three layer combination) and an adopted two layer
                      e-beam resist. The quality of the interconnects between
                      optically and e-beam lithographically defined structures and
                      the surface roughness of the gold nanogaps have been
                      improved by a controlled temperature treatment. With this
                      method the production of a variety of different gap shapes
                      could be demonstrated. Specifically the lithographic
                      structures have been successfully covered by a protection
                      layer, except of a 200 nm x 400 nm size access window
                      located on top of the nanogaps, making it suitable for
                      applications in liquid environment such as molecular and/or
                      electrochemical metal deposition. (C) 2005 Elsevier Ltd. All
                      rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / ISG-2 / ISG-3 / CNI / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB42 / I:(DE-Juel1)VDB43
                      / I:(DE-Juel1)VDB381 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Nanoscience $\&$
                      Nanotechnology},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000238073600007},
      doi          = {10.1016/j.mejo.2005.09.031},
      url          = {https://juser.fz-juelich.de/record/51241},
}