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| Journal Article | PreJuSER-51241 |
; ; ; ;
2006
Elsevier Science
Amsterdam [u.a.]
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Please use a persistent id in citations: doi:10.1016/j.mejo.2005.09.031
Abstract: A new method has been established for the reproducible fabrication of high quality, metallic nanogaps on silicon chips suitable for liquid based nanometer scale devices. Realization of mu m structures connected to nanogaps with gap sizes down to 30 nm has been achieved by a combination of an optical and an electron-beam (e-beam) lithography step using an optimised adhesion layer/metallic layer combination (Ti/Pt/Au-three layer combination) and an adopted two layer e-beam resist. The quality of the interconnects between optically and e-beam lithographically defined structures and the surface roughness of the gold nanogaps have been improved by a controlled temperature treatment. With this method the production of a variety of different gap shapes could be demonstrated. Specifically the lithographic structures have been successfully covered by a protection layer, except of a 200 nm x 400 nm size access window located on top of the nanogaps, making it suitable for applications in liquid environment such as molecular and/or electrochemical metal deposition. (C) 2005 Elsevier Ltd. All rights reserved.
Keyword(s): J ; lithographic (auto) ; electron beam (auto) ; nanogap (auto) ; protection layer (auto) ; access window (auto) ; liquid based system (auto)
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