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| 001 | 51241 | ||
| 005 | 20180211170227.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.mejo.2005.09.031 |
| 024 | 7 | _ | |2 WOS |a WOS:000238073600007 |
| 024 | 7 | _ | |2 ISSN |a 1879-2391 |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Nanoscience & Nanotechnology |
| 100 | 1 | _ | |a Kronholz, S. |b 0 |u FZJ |0 P:(DE-Juel1)VDB34541 |
| 245 | _ | _ | |a Metallic Nanogaps with Access Windows for Liquid-based Systems |
| 260 | _ | _ | |c 2006 |a Amsterdam [u.a.] |b Elsevier Science |
| 300 | _ | _ | |a 591 - 594 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Microelectronics Journal |x 0026-2692 |0 4349 |y 7 |v 37 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a A new method has been established for the reproducible fabrication of high quality, metallic nanogaps on silicon chips suitable for liquid based nanometer scale devices. Realization of mu m structures connected to nanogaps with gap sizes down to 30 nm has been achieved by a combination of an optical and an electron-beam (e-beam) lithography step using an optimised adhesion layer/metallic layer combination (Ti/Pt/Au-three layer combination) and an adopted two layer e-beam resist. The quality of the interconnects between optically and e-beam lithographically defined structures and the surface roughness of the gold nanogaps have been improved by a controlled temperature treatment. With this method the production of a variety of different gap shapes could be demonstrated. Specifically the lithographic structures have been successfully covered by a protection layer, except of a 200 nm x 400 nm size access window located on top of the nanogaps, making it suitable for applications in liquid environment such as molecular and/or electrochemical metal deposition. (C) 2005 Elsevier Ltd. All rights reserved. |
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| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a lithographic |
| 653 | 2 | 0 | |2 Author |a electron beam |
| 653 | 2 | 0 | |2 Author |a nanogap |
| 653 | 2 | 0 | |2 Author |a protection layer |
| 653 | 2 | 0 | |2 Author |a access window |
| 653 | 2 | 0 | |2 Author |a liquid based system |
| 700 | 1 | _ | |a Karthäuser, S. |b 1 |u FZJ |0 P:(DE-Juel1)130751 |
| 700 | 1 | _ | |a van der Hart, A. |b 2 |u FZJ |0 P:(DE-Juel1)VDB5570 |
| 700 | 1 | _ | |a Wandlowski, Th. |b 3 |u FZJ |0 P:(DE-Juel1)VDB9859 |
| 700 | 1 | _ | |a Waser, R. |b 4 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |0 PERI:(DE-600)2000567-2 |a 10.1016/j.mejo.2005.09.031 |g Vol. 37, p. 591 - 594 |p 591 - 594 |q 37<591 - 594 |t Microelectronics Journal |v 37 |x 0026-2692 |y 2006 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.mejo.2005.09.031 |
| 909 | C | O | |o oai:juser.fz-juelich.de:51241 |p VDB |
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| 914 | 1 | _ | |y 2006 |
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