%0 Journal Article
%A Gareev, R. R.
%A Weides, M.
%A Schreiber, R.
%A Poppe, U.
%T Resonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers
%J Applied physics letters
%V 88
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-51549
%P 172105
%D 2006
%Z Record converted from VDB: 12.11.2012
%X We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states. (c) 2006 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000237136600035
%R 10.1063/1.2198812
%U https://juser.fz-juelich.de/record/51549