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000051549 084__ $$2WoS$$aPhysics, Applied
000051549 1001_ $$0P:(DE-Juel1)VDB440$$aGareev, R. R.$$b0$$uFZJ
000051549 245__ $$aResonant Tunneling Magnetoresistive in Antiferromagnetically coupled Fe-based Structures with Multilayered Si/Ge Spacers
000051549 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2006
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000051549 440_0 $$0562$$aApplied Physics Letters$$v88$$x0003-6951
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000051549 520__ $$aWe report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states. (c) 2006 American Institute of Physics.
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000051549 7001_ $$0P:(DE-Juel1)VDB59925$$aWeides, M.$$b1$$uFZJ
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000051549 7001_ $$0P:(DE-Juel1)VDB21377$$aPoppe, U.$$b3$$uFZJ
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